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| SFP12N65 Silicon N-Channel MOSFET Features 12A,650V,RDS(on)(Max0.8)@VGS=10V Ultra-low Gate Charge(Typical 30nC) Fast Switching Capability 100% Avalanche Tested Maximum Junction Temperature Range(150) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for AC-DC switching power supplies, DC-DC power converters, high voltage H-bridge motor drive PMW Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25) Continuous Drain Current(@Tc=100) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25) Derating Factor above 25 Junction and Storage Temperature Channel Temperature (Note 2) (Note 1) (Note 3) (Note1) 30 990 22 4.5 178 1.43 -55~150 300 Parameter Value 650 12 Units V A A A V mJ mJ V/ns W W/ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Value Min Typ Max 0.70 62.5 Units /W /W /W Rev, A Nov.2008 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. 1/7 SFP12N65 Electrical Characteristics (Tc = 25C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Symbol IGSS V(BR)GSS IDSS V(BR)DSS VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD =520 V, VGS = 10 V, ID = 12A (Note4,5) 9.6 18.6 Test Condition VGS = 30 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 650 V, VGS = 0 V VDS = 480 V, Tc = 125C ID = 250 A, VGS = 0 V VDS = 10 V, ID =250 A VGS = 10 V, ID = 6A VDS = 50 V, ID =6A VDS = 25 V, VGS = 0 V, f = 1 MHz VDD =325V, ID = 12A RG=25 (Note4,5) Min 30 650 2 Type 0.64 6.4 1830 155 2.0 50 49 310 54 51.7 Max 100 10 100 4 0.8 ns nC pF Unit nA V A A V V S Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") Charge Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 10A, VGS = 0 V IDR = 10 A, VGS = 0 V, dIDR / dt = 100 A / s Min Type 450 5.0 Max 12 48 1.4 Unit A A V ns C Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=14mH,IAS=12A,VDD=95V,RG=25,Starting TJ=25 3.ISD10A,di/dt200A/us, VDD Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. SFP12N65 Fig. 1 On-State Characteristics Fig.2 Transfer Current Characteristics Fig.3 On-Resistance Variation vs Drain Current Fig.4 Body Diode Forward Voltage Variation with Source Current And Temperature Fig.5 On-Resistance Variation vs Junction Temperature Fig.6 Gate Charge Characteristics 3/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. SFP12N65 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response Curve 4/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. SFP12N65 Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. SFP12N65 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. SFP12N65 TO-220C Package Dimension Unit: mm 7/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. |
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